Item Details

Print View

Fundamentals of Nanotransistors

Mark Lundstrom, Purdue University, USA
Format
Book
Published
Singapore ; Hackensack, NJ : World Scientific Publishing Co. Pte. Ltd., [2017]
Language
English
Series
Lessons From Nanoscience: A Lecture Notes Series
Lessons From Nanoscience
ISBN
9789814571722, 9814571725, 9789814571739 (pbk. : alk. paper), 9814571733 (pbk. : alk. paper)
Contents
  • Overview
  • The transistor as a black box
  • The MOSFET: a barrier-controlled device
  • MOSFET IV: traditional approach
  • MOSFET IV: the virtual source model
  • Poisson equation and the depletion approximation
  • Gate voltage and surface potential
  • Mobile charge: bulk MOS
  • Mobile charge: extremely thin SOI
  • 2D MOS electrostatics
  • The VS model revisited
  • The Landauer approach to transport
  • The ballistic MOSFET
  • The ballistic injection velocity
  • Connecting the ballistic and VS models
  • Carrier scattering and transmission
  • Transmission theory of the MOSFET
  • Connecting the transmission and VS models
  • VS characterization of transport in nanotransistors
  • Limits and limitations.
Description
pages cm.
Notes
Includes bibliographical references and index.
Series Statement
Lessons from nanoscience: a lecture notes series ; vol. 6
Lessons from nanoscience ; v. 6
Technical Details
  • Staff View

    LEADER 02142cam a22004218i 4500
    001 u7228295
    003 SIRSI
    005 20170703073405.0
    008 170308t20172017si b 001 0 eng c
    010
      
      
    a| 2017010454
    020
      
      
    a| 9789814571722 q| (hardcover ; q| alk. paper)
    020
      
      
    a| 9814571725 q| (hardcover ; q| alk. paper)
    020
      
      
    a| 9789814571739 (pbk. : alk. paper)
    020
      
      
    a| 9814571733 (pbk. : alk. paper)
    040
      
      
    a| OU/DLC b| eng e| rda c| OU
    042
      
      
    a| pcc
    050
    0
    0
    a| TK7871.99.M44 b| L86 2017
    082
    0
    0
    a| 621.3815/284 2| 23
    100
    1
      
    a| Lundstrom, Mark, e| author.
    245
    1
    0
    a| Fundamentals of nanotransistors / c| Mark Lundstrom, Purdue University, USA.
    263
      
      
    a| 1705
    264
      
    1
    a| Singapore ; a| Hackensack, NJ : b| World Scientific Publishing Co. Pte. Ltd., c| [2017]
    264
      
    4
    c| ©2017
    300
      
      
    a| pages cm.
    336
      
      
    a| text b| txt 2| rdacontent
    337
      
      
    a| unmediated b| n 2| rdamedia
    338
      
      
    a| volume b| nc 2| rdacarrier
    490
    1
      
    a| Lessons from nanoscience: a lecture notes series ; v| vol. 6
    504
      
      
    a| Includes bibliographical references and index.
    505
    0
      
    a| Overview -- The transistor as a black box -- The MOSFET: a barrier-controlled device -- MOSFET IV: traditional approach -- MOSFET IV: the virtual source model -- Poisson equation and the depletion approximation -- Gate voltage and surface potential -- Mobile charge: bulk MOS -- Mobile charge: extremely thin SOI -- 2D MOS electrostatics -- The VS model revisited -- The Landauer approach to transport -- The ballistic MOSFET -- The ballistic injection velocity -- Connecting the ballistic and VS models -- Carrier scattering and transmission -- Transmission theory of the MOSFET -- Connecting the transmission and VS models -- VS characterization of transport in nanotransistors -- Limits and limitations.
    650
      
    0
    a| Metal oxide semiconductor field-effect transistors.
    650
      
    0
    a| Nanostructured materials.
    830
      
    0
    a| Lessons from nanoscience ; v| v. 6.
    911
      
      
    a| 9789814571722
    949
      
      
    h| SE-PPDA
    999
      
      
    a| TK7871.99 .M44 L86 2017 w| LC i| 7228295-1001 l| NOTORDERED m| SCI-ENG t| BOOK
▾See more
▴See less

Availability

Google Preview

Google Books Preview
Library Location Map Availability Call Number
Brown Science and Engineering Available to Order N/A Available to Order
Learn more about Available to Order items.