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Chemical-Mechanical Polishing 2000: Fundamentals and Materials Issues : Symposium Held April 26-27, 2000, San Francisco, California, U.S.A.

editors, Rajiv K. Singh ... [et al.]
Format
Book
Published
Warrendale, Pa. : Materials Research Society, c2001.
Language
English
Series
Materials Research Society Symposium Proceedings
Materials Research Society Symposia Proceedings
ISBN
1558995218
Contents
  • CMP Mechanisms
  • Effect of Wafer Shape on Slurry Film Thickness and Friction Coefficients in Chemical Mechanical Planarization / Joseph Lu, Jonathan Coppeta, Chris Rogers, Vincent P. Manno, Livia Racz, Ara Philipossian, Mansour Moinpour, Frank Kaufman E1.2
  • A Model of Chemical Mechanical Polishing / Ed Paul E1.4
  • Modeling on Mechanical Properties of Polishing Pads in CMP Process / Takeshi Nishioka, Satoko Iwami, Takashi Kawakami, Yoshikuni Tateyama, Hiroshi Ohtani, Naoto Miyashita E1.5
  • Fundamental Studies on the Mechanisms of Oxide CMP / Uday Mahajan, Seung-Mahn Lee, Rajiv K. Singh E1.7
  • Dielectric and Metal CMP
  • Planarization of Cu and Ta Using Silica and Alumina Abrasives--A Comparison / Y. Li, S. Ramarajan, M. Hariharaputhiran, Y.S. Her, S.V. Babu E2.4
  • Chemical Wear of Cu CMP / Hong Liang, Jean-Michel Martin, Beatrice Vacher, Vlasta Brusic E2.5
  • Poster Session: Dielectric and Metal CMP
  • A Novel Single Step Lapping and Chemo-Mechanical Polishing Schem for Antimonide Based Semiconductors Using 1 [mu]m Agglomerate-Free Alumina Slurry / P.S. Dutta, R.J. Gutmann, D. Keller, L. Sweet E4.1
  • Multi-Level Damascene Process Development: Aluminum CMP / David A. Hansen, Gerry Moloney, Alex Reyes E4.3
  • Poster Session: Process Integration and Manufacturability
  • Improvement of Wafer Edge Profile and CMP Performance Through the Floating Head Design / Huey-Ming Wang, Gerry Moloney, Mario Stella, Sesinando DeGuzman E5.1
  • A New Poly-Si CMP Process With Small Erosion for Advanced Trench Isolation Process / Naoto Miyashita, Shin-ichiro Uekusa, Takeshi Nishioka, Satoko Iwami E5.3
  • Characteristics of the Electrolyzed D.I. Water With Chemicals and the Outline of the Supply System / Mitsuhiko Shirakashi, Kenya Itoh, Ichiro Katakabe, Mamabu Tsujimura, Takayuki Saitoh, Kaoru Yamada, Naoto Miyashita, Masako Kodera, Yoshitaka Matsui E5.4
  • Poster Session: CMP Consumables
  • An Image Analysis Technique for Assessing Particle Size and Agglomeration Tendency of Slurries / Susan R. Machinski, Kathleen A. Richardson, Aristide Dogariu E6.1
  • Performance of Polishing Slurries Containing Silica Particles Grown by Sol-Gel Method / Sun Hyuk Bae, Jae-Hyun So, Seung-Man Yang, Do Hyun Kim E6.5
  • Optical Characterization of Porous Membranes / Claudia Mujat, Lorrene Denney, Aristide Dogariu E6.10
  • CMP Consumables
  • Interfacial Fluid Pressure and Its Effects on SiO[subscript 2] Chemical Mechanical Polishing / C. Zhou, L. Shan, J.R. Hight, S.H. Ng, A.J. Paszkowski, J. Tichy, S. Danyluk E7.1
  • Dynamic Mechanical Analysis (DMA) of CMP Pad Materials / Irene Li, Kersten M. Forsthoefel, Kathleen A. Richardson, Yaw S. Obeng, William G. Easter, Alvaro Maury E7.3
  • An Evaluation of the Effects of Benzotriazole in NH[subscript 4]OH Slurry for Copper CMP / V.S.C. Len, D.W. McNeill, H.S. Gamble E7.4
  • Fundamental Study of Iodate and Iodine Based Slurries for Copper CMP / Seung-Mahn Lee, Uday Mahajan, Zhan Chen, Rajiv K. Singh E7.8
  • Process Integration and Manufacturability
  • Technique of Surface Control With the Electrolyzed D.I. Water for Post CMP Cleaning / Mitsuhiko Shirakashi, Kenya Itoh, Ichiro Katakabe, Masayuki Kamezawa, Sachiko Kihara, Manabu Tsujimura, Takayuki Saitoh, Kaoru Yamada, Naoto Miyashita, Masako Kodera, Yoshitaka Matsui E8.3
  • Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films / Benjamin A. Bonner, Boris Fishkin, Jeffrey David, Chad Garretson, Thomas H. Osterheld E8.6
  • Using Wafer-Scale Patterns for CMP Analysis / Brian Lee, Terence Gan, Duane S. Boning, Jeffrey David, Benjamin A. Bonner, Peter McKeever, Thomas H. Osterheld E8.8
  • Planarization of Cooper Damascene Interconnects by Spin-Etch Process: A Chemical Approach / Shyama P. Mukherjee, Joseph A. Levert, Donald S. DeBear E8.10.
Description
1 v. (various pagings) : ill. ; 24 cm.
Notes
Includes bibliographical references and indexes.
Series Statement
Materials Research Society symposium proceedings ; v. 613
Materials Research Society symposia proceedings v. 613
Technical Details
  • Access in Virgo Classic
  • Staff View

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    a| Chemical-Mechanical Polishing 2000 : b| fundamentals and materials issues : symposium held April 26-27, 2000, San Francisco, California, U.S.A. / c| editors, Rajiv K. Singh ... [et al.].
    260
      
      
    a| Warrendale, Pa. : b| Materials Research Society, c| c2001.
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    a| 1 v. (various pagings) : b| ill. ; c| 24 cm.
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    1
      
    a| Materials Research Society symposium proceedings ; v| v. 613
    504
      
      
    a| Includes bibliographical references and indexes.
    505
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    t| CMP Mechanisms -- t| Effect of Wafer Shape on Slurry Film Thickness and Friction Coefficients in Chemical Mechanical Planarization / r| Joseph Lu, Jonathan Coppeta, Chris Rogers, Vincent P. Manno, Livia Racz, Ara Philipossian, Mansour Moinpour, Frank Kaufman g| E1.2 -- t| A Model of Chemical Mechanical Polishing / r| Ed Paul g| E1.4 -- t| Modeling on Mechanical Properties of Polishing Pads in CMP Process / r| Takeshi Nishioka, Satoko Iwami, Takashi Kawakami, Yoshikuni Tateyama, Hiroshi Ohtani, Naoto Miyashita g| E1.5 -- t| Fundamental Studies on the Mechanisms of Oxide CMP / r| Uday Mahajan, Seung-Mahn Lee, Rajiv K. Singh g| E1.7 -- t| Dielectric and Metal CMP -- t| Planarization of Cu and Ta Using Silica and Alumina Abrasives--A Comparison / r| Y. Li, S. Ramarajan, M. Hariharaputhiran, Y.S. Her, S.V. Babu g| E2.4 -- t| Chemical Wear of Cu CMP / r| Hong Liang, Jean-Michel Martin, Beatrice Vacher, Vlasta Brusic g| E2.5 -- t| Poster Session: Dielectric and Metal CMP -- t| A Novel Single Step Lapping and Chemo-Mechanical Polishing Schem for Antimonide Based Semiconductors Using 1 [mu]m Agglomerate-Free Alumina Slurry / r| P.S. Dutta, R.J. Gutmann, D. Keller, L. Sweet g| E4.1 -- t| Multi-Level Damascene Process Development: Aluminum CMP / r| David A. Hansen, Gerry Moloney, Alex Reyes g| E4.3 -- t| Poster Session: Process Integration and Manufacturability -- t| Improvement of Wafer Edge Profile and CMP Performance Through the Floating Head Design / r| Huey-Ming Wang, Gerry Moloney, Mario Stella, Sesinando DeGuzman g| E5.1 -- t| A New Poly-Si CMP Process With Small Erosion for Advanced Trench Isolation Process / r| Naoto Miyashita, Shin-ichiro Uekusa, Takeshi Nishioka, Satoko Iwami g| E5.3 -- t| Characteristics of the Electrolyzed D.I. Water With Chemicals and the Outline of the Supply System / r| Mitsuhiko Shirakashi, Kenya Itoh, Ichiro Katakabe, Mamabu Tsujimura, Takayuki Saitoh, Kaoru Yamada, Naoto Miyashita, Masako Kodera, Yoshitaka Matsui g| E5.4 -- t| Poster Session: CMP Consumables -- t| An Image Analysis Technique for Assessing Particle Size and Agglomeration Tendency of Slurries / r| Susan R. Machinski, Kathleen A. Richardson, Aristide Dogariu g| E6.1 -- t| Performance of Polishing Slurries Containing Silica Particles Grown by Sol-Gel Method / r| Sun Hyuk Bae, Jae-Hyun So, Seung-Man Yang, Do Hyun Kim g| E6.5 -- t| Optical Characterization of Porous Membranes / r| Claudia Mujat, Lorrene Denney, Aristide Dogariu g| E6.10 -- t| CMP Consumables -- t| Interfacial Fluid Pressure and Its Effects on SiO[subscript 2] Chemical Mechanical Polishing / r| C. Zhou, L. Shan, J.R. Hight, S.H. Ng, A.J. Paszkowski, J. Tichy, S. Danyluk g| E7.1 -- t| Dynamic Mechanical Analysis (DMA) of CMP Pad Materials / r| Irene Li, Kersten M. Forsthoefel, Kathleen A. Richardson, Yaw S. Obeng, William G. Easter, Alvaro Maury g| E7.3 -- t| An Evaluation of the Effects of Benzotriazole in NH[subscript 4]OH Slurry for Copper CMP / r| V.S.C. Len, D.W. McNeill, H.S. Gamble g| E7.4 -- t| Fundamental Study of Iodate and Iodine Based Slurries for Copper CMP / r| Seung-Mahn Lee, Uday Mahajan, Zhan Chen, Rajiv K. Singh g| E7.8 -- t| Process Integration and Manufacturability -- t| Technique of Surface Control With the Electrolyzed D.I. Water for Post CMP Cleaning / r| Mitsuhiko Shirakashi, Kenya Itoh, Ichiro Katakabe, Masayuki Kamezawa, Sachiko Kihara, Manabu Tsujimura, Takayuki Saitoh, Kaoru Yamada, Naoto Miyashita, Masako Kodera, Yoshitaka Matsui g| E8.3 -- t| Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films / r| Benjamin A. Bonner, Boris Fishkin, Jeffrey David, Chad Garretson, Thomas H. Osterheld g| E8.6 -- t| Using Wafer-Scale Patterns for CMP Analysis / r| Brian Lee, Terence Gan, Duane S. Boning, Jeffrey David, Benjamin A. Bonner, Peter McKeever, Thomas H. Osterheld g| E8.8 -- t| Planarization of Cooper Damascene Interconnects by Spin-Etch Process: A Chemical Approach / r| Shyama P. Mukherjee, Joseph A. Levert, Donald S. DeBear g| E8.10.
    596
      
      
    a| 5
    650
      
    0
    a| Electrolytic polishing v| Congresses.
    650
      
    0
    a| Grinding and polishing v| Congresses.
    700
    1
      
    a| Singh, R. K. q| (Rajiv K.)
    830
      
    0
    a| Materials Research Society symposia proceedings v| v. 613.
    999
      
      
    a| TS654.5 .C46 2000 w| LC i| X004523048 l| STACKS m| SCI-ENG t| BOOK
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