Item Details

The Certification of 100 Mm Diameter Silicon Resistivity SRMs 2541 Through 2547 Using Dual-Configuration Four-Point Probe Measurements [microform]

J.R. Ehrstein, M.C. Croarkin
Format
Book; Government Document; Microform
Published
Gaithersburg, MD : U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology ; Washington, DC : For sale by the Supt. of Docs., U.S. G.P.O., 1999.
Edition
1999 ed
Language
English
Variant Title
Certification of one hundred millimeter diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements
Series
NIST Special Publication
Standard Reference Materials
SuDoc Number
C 13.48/4:260-131
Description
vi, 106 p. : ill.
Notes
  • "Supercedes NIST special publication 260-131, August 1997."
  • Shipping list no.: 99-0777-M.
  • "Issued June 1999."
  • Includes bibliographical references (p. 44-45).
Reproduction Notes
Microfiche. [Washington, D.C.] : Supt. of Docs., U.S. G.P.O., [1999] 2 microfiches : negative.
Series Statement
NIST special publication ; 260-131
Technical Details
  • Access in Virgo Classic

  • LEADER 01928nam a2200445 a 4500
    001 u2938104
    003 SIRSI
    005 19990804092136.0
    007 he bmb024bbca
    008 990804s1999 mdua bb f000 0 eng d
    035
      
      
    a| (Sirsi) tmp97155073
    035
      
      
    a| (OCoLC)42011509
    037
      
      
    a| 003-003-03609-9 b| GPO f| paper copy c| $9.50
    040
      
      
    a| GPO c| GPO d| DLC d| MvI
    049
      
      
    a| VAMM
    074
      
      
    a| 0248-B (MF)
    086
    0
      
    a| C 13.48/4:260-131
    100
    1
      
    a| Ehrstein, James R.
    245
    1
    4
    a| The certification of 100 mm diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements h| [microform] / c| J.R. Ehrstein, M.C. Croarkin.
    246
    3
      
    a| Certification of one hundred millimeter diameter silicon resistivity SRMs 2541 through 2547 using dual-configuration four-point probe measurements
    250
      
      
    a| 1999 ed.
    260
      
      
    a| Gaithersburg, MD : b| U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology ; a| Washington, DC : b| For sale by the Supt. of Docs., U.S. G.P.O., c| 1999.
    300
      
      
    a| vi, 106 p. : b| ill.
    440
      
    0
    a| NIST special publication ; v| 260-131
    440
      
    0
    a| Standard reference materials
    500
      
      
    a| "Supercedes NIST special publication 260-131, August 1997."
    500
      
      
    a| Shipping list no.: 99-0777-M.
    500
      
      
    a| "Issued June 1999."
    504
      
      
    a| Includes bibliographical references (p. 44-45).
    533
      
      
    a| Microfiche. b| [Washington, D.C.] : c| Supt. of Docs., U.S. G.P.O., d| [1999] e| 2 microfiches : negative.
    596
      
      
    a| 2
    650
      
    0
    a| Silicon.
    650
      
    0
    a| Silicon x| Electric properties.
    700
    1
      
    a| Croarkin, M. C. q| (Mary Carroll), d| 1934-
    710
    2
      
    a| National Institute of Standards and Technology (U.S.)
    900
      
      
    a| tmp97155073
    999
      
      
    a| C 13.48/4:260-131 w| SUDOC i| X005055829 l| 3EAST m| ALDERMAN t| MICROFICHE

Availability

Google Preview

Library Location Map Availability Call Number
Alderman 3rd Floor East Reading Room N/A Available Non-Circ.