Item Details

Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

Wang, Yuhan
Format
Article
Author
Wang, Yuhan
Contributor
Comes, Ryan
Wolf, Stuart
Abstract
We have observed threshold switching (TS) with minimal hysteresis and a small threshold electric field (60–90 kV/cm) in Nb/NbO2/TiN structures. The TS was unipolar with certain repeatability. A less sharp but still sizable change in the device resistance can be observed up to 150 ◦C. The TS without Nb capping layer exhibited hysteretic characteristics. It was proposed that the surface Nb2O5 layer on NbO2 could significantly modify the TS in this vertical device. This understanding of the surface effect will allow further control of the non-linear IV characteristics for NbO2-based switches or selector devices.
Language
English
Date Received
20170712
Published
IEEE, 11/15/2015
Published Date
11/15/2015
Sponsoring Agency
IEEE Electron Devices Society
Collection
Libra Open Repository
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