Item Details

Reliability of Planar GaAs Schottky Diodes

Bowers, Jodi L
Format
Thesis/Dissertation; Online
Author
Bowers, Jodi L
Advisor
Jones, Stephen H
Crowe, Thomas
Carlson, W
Johnson, Barry
Abstract
This research focuses on the gathering and analysis of accelerated life test data for planar GaAs Schottky diodes fabricated at the University of Virginia. Reliability estimates are desired by users who wish to operate diodes in a space environment. Because mission times of several years are planned, accelerated life testing proved necessary. Such testing involves the application of some failure accelerating stress to the devices in order to shorten their lifetimes. In this case, elevated temperature served as the accelerating stress, causing the diodes' current voltage characteristics to degrade. Two batches of diodes, balanced mixers (SD2T6) and single anode diodes (E02PR2526), were evaluated at temperatures from 125° C to 200° C. Fitting the life data with the Arrhenius-Log normal model allows extrapolation to lower temperatures, providing estimates of the expected lifetime distributions at normal operating temperatures.
Language
English
Date Received
20150928
Published
University of Virginia, Department of Electrical Engineering, MS (Master of Science), 1993
Published Date
1993-05-01
Degree
MS (Master of Science)
Collection
Libra ETD Repository
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