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Deep UV Photolithography and Characterization of Doped Silicon and Endohedeal Fullerenes by Raman Spectroscopy

Burke, Brian Gregory
Format
Thesis/Dissertation; Online
Author
Burke, Brian Gregory
Advisor
Burke, Brian
Abstract
This work addresses economical alternatives to electron beam lithography (EBL) by deep ultra-violet (UV) photolithography and proposes surface enhanced transmission techniques for direct-write lithography, investigates surface doping in silicon by Raman spectroscopy for the development of surface scattering field-effect transistors (SurFETs), characterizes endohedral fullerenes (endofullerenes) by Raman and inelastic electron tunneling spectroscopy (IETS) for applications in molecular electronics, organic photovoltaics, and magneto-electronic devices. Note: Abstract extracted from PDF text
Language
English
Published
University of Virginia, Department of Physics, PHD, 2010
Published Date
2010-05-01
Degree
PHD
Collection
Libra ETD Repository
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